BB304MDW-TL-E

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BB304MDW-TL-E datasheet

• Маркировка
  BB304MDW-TL-E
• Производитель
  Renesas Electronics
• Описание
  Renesas Electronics BB304MDW-TL-E Mfr Package Description: LEAD FREE, MINIMOLD, SC-61AA, SOT-143RMOD, MPAK-4 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN BISMUTH Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.1500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, DEPLETION Transistor Type: RF SMALL SIGNAL Power Gain-Min (Gp): 24 dB Drain Current-Max (ID): 0.0250 A Highest Frequency Band: VERY HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0500 pF DS Breakdown Voltage-Min: 12 V
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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